
P-channel power MOSFET, surface mountable in a D2PAK package. Features 100V drain-to-source voltage, 12A continuous drain current, and 300mΩ drain-to-source resistance. Operates with a 20V gate-to-source voltage and offers a maximum power dissipation of 88W. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 39ns. RoHS compliant and suitable for general-purpose power applications.
Vishay IRF9530STRRPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 860pF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRF9530STRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
