
P-channel power MOSFET, surface mountable in a D2PAK package. Features 100V drain-to-source voltage, 12A continuous drain current, and 300mΩ drain-to-source resistance. Operates with a 20V gate-to-source voltage and offers a maximum power dissipation of 88W. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 39ns. RoHS compliant and suitable for general-purpose power applications.
Vishay IRF9530STRRPBF technical specifications.
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