P-channel MOSFET transistor for through-hole mounting in a TO-220AB package. Features a continuous drain current of 19A and a drain-source breakdown voltage of -100V. Offers a maximum drain-source on-resistance of 200mR at a nominal gate-source voltage of -4V. Operates across a temperature range of -55°C to 175°C with a maximum power dissipation of 150W. Includes fast switching characteristics with turn-on delay time of 16ns and fall time of 57ns.
PackageTO-220AB
MountingThrough Hole
PolarityP-CHANNEL
Power150W
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Technical Specifications
Vishay IRF9540PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
19A
Drain to Source Breakdown Voltage
-100V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
-100V
Drain-source On Resistance-Max
200mR
Fall Time
57ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.4nF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
150W
Rds On Max
200mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
34ns
Turn-On Delay Time
16ns
DC Rated Voltage
-100V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9540PBF Datasheet
Download the complete datasheet for Vishay IRF9540PBF to view detailed technical specifications.
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