P-channel MOSFET transistor featuring 200V drain-source voltage and 1.8A continuous drain current. Offers 3-ohm drain-source resistance and 20W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package with 3 pins, suitable for through-hole mounting. Key switching characteristics include an 8ns fall time and 10ns turn-off delay.
PackageTO-220-3
Current Rating-1.8A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9610 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.8A
Current Rating
-1.8A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
200V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
170pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
20W
Rds On Max
3R
RoHS Compliant
No
Turn-Off Delay Time
10ns
Turn-On Delay Time
8ns
DC Rated Voltage
-200V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF9610 Datasheet
Download the complete datasheet for Vishay IRF9610 to view detailed technical specifications.
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