P-channel power MOSFET featuring a -200V drain-source breakdown voltage and 1.8A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3-ohm drain-source resistance and operates with a 20V gate-source voltage. Designed for surface mounting in a D2PAK package, it boasts a maximum power dissipation of 3W and a maximum operating temperature of 150°C. The component exhibits fast switching characteristics with an 8ns fall time and 1ns turn-off delay.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
Power3W
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Technical Specifications
Vishay IRF9610SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | -200V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 170pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 1ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF9610SPBF Datasheet
Download the complete datasheet for Vishay IRF9610SPBF to view detailed technical specifications.
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