P-channel power MOSFET featuring a -200V drain-source breakdown voltage and 1.8A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3-ohm drain-source resistance and operates with a 20V gate-source voltage. Designed for surface mounting in a D2PAK package, it boasts a maximum power dissipation of 3W and a maximum operating temperature of 150°C. The component exhibits fast switching characteristics with an 8ns fall time and 1ns turn-off delay.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
Power3W
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Technical Specifications
Vishay IRF9610SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
1.8A
Drain to Source Breakdown Voltage
-200V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
-200V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
170pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
1ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9610SPBF Datasheet
Download the complete datasheet for Vishay IRF9610SPBF to view detailed technical specifications.
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