P-channel MOSFET for power applications, featuring a 200V drain-source voltage and 3.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.5-ohm drain-source resistance. Designed for surface mounting in a D2PAK package, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 40W. The component exhibits a turn-on delay of 15ns and a fall time of 15ns, with an input capacitance of 350pF. It is RoHS compliant and lead-free.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9620SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
3.5A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
1.5R
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Turn-On Delay Time
15ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9620SPBF Datasheet
Download the complete datasheet for Vishay IRF9620SPBF to view detailed technical specifications.
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