P-channel MOSFET for power applications, featuring a 200V drain-source voltage and 3.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.5-ohm drain-source resistance. Designed for surface mounting in a D2PAK package, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 40W. The component exhibits a turn-on delay of 15ns and a fall time of 15ns, with an input capacitance of 350pF. It is RoHS compliant and lead-free.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9620SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF9620SPBF Datasheet
Download the complete datasheet for Vishay IRF9620SPBF to view detailed technical specifications.
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