P-channel power MOSFET featuring 200V drain-source voltage and 1.5 ohm drain-source on-resistance. This silicon metal-oxide semiconductor FET offers a continuous drain current of 3.5A and a maximum power dissipation of 40W. Designed for surface mounting in a TO-263-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 15ns fall time and 20ns turn-off delay.
PackageTO-263-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9620STRLPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF9620STRLPBF Datasheet
Download the complete datasheet for Vishay IRF9620STRLPBF to view detailed technical specifications.
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