P-channel power MOSFET featuring a -200V drain-source breakdown voltage and 6.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 800mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 74W. Key switching characteristics include a 24ns fall time and 12ns turn-on delay.
PackageTO-220AB
Current Rating-6.5A
MountingThrough Hole
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF9630PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 6.5A |
| Current Rating | -6.5A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | -200V |
| Drain-source On Resistance-Max | 800MR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 74W |
| Rds On Max | 800mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | -200V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF9630PBF Datasheet
Download the complete datasheet for Vishay IRF9630PBF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
