IRF9640

P-channel MOSFET transistor featuring 200V drain-source voltage and 11A continuous drain current. Offers 0.5 ohm drain-to-source resistance and 125W maximum power dissipation. This silicon metal-oxide semiconductor FET is housed in a TO-220AB package with through-hole mounting. Key electrical characteristics include a 20V gate-source voltage, 1.2nF input capacitance, and fast switching times with turn-on delay of 13ns and fall time of 38ns.