P-channel MOSFET, TO-220AB package, featuring a 60V drain-source breakdown voltage and 6.7A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 500mΩ drain-source on-resistance. With a maximum power dissipation of 43W and operating temperatures from -55°C to 175°C, it supports through-hole mounting. Key switching characteristics include a 10ns turn-on delay and 31ns fall time.
PackageTO-220AB
Current Rating-6.7A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9Z14PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
6.7A
Current Rating
-6.7A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
500mR
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
270pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
43W
Mount
Through Hole
Nominal Vgs
-2V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
43W
Radiation Hardening
No
Rds On Max
500mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
10ns
Turn-On Delay Time
11ns
DC Rated Voltage
-60V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9Z14PBF Datasheet
Download the complete datasheet for Vishay IRF9Z14PBF to view detailed technical specifications.
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