P-channel MOSFET, surface mountable in a D2PAK package. Features a continuous drain current of 6.7A and a drain-to-source breakdown voltage of -60V. Offers a low on-resistance of 500mR at a gate-to-source voltage of 10V. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 43W. Includes fast switching characteristics with turn-on delay time of 11ns and fall time of 31ns.
Vishay IRF9Z14S technical specifications.
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