IRF9Z24

P-channel MOSFET, 60V drain-source voltage, 11A continuous drain current, and 0.28-ohm drain-to-source resistance. Features a 20V gate-to-source voltage, 60W maximum power dissipation, and operates from -55°C to 175°C. This through-hole component is housed in a TO-220-3 package with a 1-element configuration. Includes input capacitance of 570pF and switching times including a 13ns turn-on delay and 29ns fall time.