P-channel power MOSFET, TO-220AB package, featuring 50V drain-source voltage and 18A continuous drain current. Offers 0.14 ohm drain-source resistance (Rds On Max) and 74W maximum power dissipation. Operates within a temperature range of -55°C to 150°C with a gate-source voltage of 20V. Through-hole mounting, 900pF input capacitance, and 64ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9Z30 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Drain to Source Resistance
140mR
Drain to Source Voltage (Vdss)
50V
Fall Time
64ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
900pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
140mR
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF9Z30 Datasheet
Download the complete datasheet for Vishay IRF9Z30 to view detailed technical specifications.
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