P-channel power MOSFET featuring 60V drain-source voltage and 18A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.14-ohm drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 88W. Key switching characteristics include an 18ns turn-on delay and a 20ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9Z34 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Lead Pitch | 2.54mm |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRF9Z34 Datasheet
Download the complete datasheet for Vishay IRF9Z34 to view detailed technical specifications.
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