P-channel power MOSFET featuring 60V drain-source voltage and 18A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.14-ohm drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 88W. Key switching characteristics include an 18ns turn-on delay and a 20ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF9Z34 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Drain to Source Resistance
140mR
Drain to Source Voltage (Vdss)
60V
Fall Time
58ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.1nF
Lead Free
Contains Lead
Lead Pitch
2.54mm
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
140mR
RoHS Compliant
No
Turn-Off Delay Time
20ns
Turn-On Delay Time
18ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF9Z34 Datasheet
Download the complete datasheet for Vishay IRF9Z34 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
