P-channel MOSFET, TO-220AB package, featuring a continuous drain current of 18A and a drain-source voltage of -60V. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 140mΩ. With a maximum power dissipation of 88W and an operating temperature range from -55°C to 175°C, it supports through-hole mounting. The component boasts fast switching characteristics with turn-on delay of 18ns and fall time of 58ns.
PackageTO-220AB
MountingThrough Hole
PolarityP-CHANNEL
Power88W
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Technical Specifications
Vishay IRF9Z34PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 140mR |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.1nF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 88W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF9Z34PBF Datasheet
Download the complete datasheet for Vishay IRF9Z34PBF to view detailed technical specifications.
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