P-channel MOSFET, TO-220AB package, featuring a continuous drain current of 18A and a drain-source voltage of -60V. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 140mΩ. With a maximum power dissipation of 88W and an operating temperature range from -55°C to 175°C, it supports through-hole mounting. The component boasts fast switching characteristics with turn-on delay of 18ns and fall time of 58ns.
PackageTO-220AB
MountingThrough Hole
PolarityP-CHANNEL
Power88W
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Technical Specifications
Vishay IRF9Z34PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
18A
Drain to Source Resistance
140mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
140mR
Fall Time
58ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.1nF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
88W
Radiation Hardening
No
Rds On Max
140mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
20ns
Turn-On Delay Time
18ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9Z34PBF Datasheet
Download the complete datasheet for Vishay IRF9Z34PBF to view detailed technical specifications.
No datasheet is available for this part.