N-Channel Power MOSFET featuring 500V drain-source voltage and 11A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.52 ohm drain-source resistance and 170W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it exhibits fast switching speeds with turn-on delay of 14ns and fall time of 28ns. Operating temperature range is -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFB11N50A technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Drain to Source Resistance
520mR
Drain to Source Voltage (Vdss)
500V
Fall Time
28ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
1.423nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
520mR
RoHS Compliant
No
Turn-Off Delay Time
32ns
Turn-On Delay Time
14ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFB11N50A Datasheet
Download the complete datasheet for Vishay IRFB11N50A to view detailed technical specifications.
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