N-Channel Power MOSFET, 500V Vds, 11A continuous drain current, and 520mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB through-hole package, 170W power dissipation, and a 4V nominal gate-source threshold voltage. Operating temperature range is -55°C to 150°C, with typical turn-on delay of 14ns and fall time of 28ns. This RoHS compliant component is designed for high-power applications.
PackageTO-220AB
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFB11N50APBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 520mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 520mR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 1.423nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 170W |
| Radiation Hardening | No |
| Rds On Max | 520mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFB11N50APBF Datasheet
Download the complete datasheet for Vishay IRFB11N50APBF to view detailed technical specifications.
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