N-channel power MOSFET featuring 500V drain-source voltage and 14A continuous drain current. This through-hole component offers a low 0.45 ohm drain-source resistance. Key switching characteristics include a 15ns turn-on delay and 31ns fall time. Encased in a TO-220AB package, it supports a maximum power dissipation of 250W and operates within a -55°C to 150°C temperature range.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFB13N50A technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
14A
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
500V
Fall Time
31ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
1.91nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
450mR
RoHS Compliant
No
Turn-Off Delay Time
39ns
Turn-On Delay Time
15ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFB13N50A Datasheet
Download the complete datasheet for Vishay IRFB13N50A to view detailed technical specifications.
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