N-channel power MOSFET featuring 500V drain-source voltage and 17A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.35 ohm drain-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 280W. Key switching characteristics include a 20ns turn-on delay and 30ns fall time.
PackageTO-220-3
Current Rating17A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFB16N50K technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Resistance
350mR
Drain to Source Voltage (Vdss)
500V
Fall Time
30ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
2.21nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
280W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
350mR
RoHS Compliant
No
Turn-Off Delay Time
38ns
Turn-On Delay Time
20ns
DC Rated Voltage
500V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFB16N50K Datasheet
Download the complete datasheet for Vishay IRFB16N50K to view detailed technical specifications.
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