Vishay
IRFB16N60LPBF
Power Field-Effect Transistor, 16A I(D), 600V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFB16N60LPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
16A
Drain to Source Resistance
460mR
Drain to Source Voltage (Vdss)
600V
Fall Time
5.5ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
2.72nF
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
310W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
460mR
RoHS Compliant
No
Turn-Off Delay Time
28ns
Turn-On Delay Time
20ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFB16N60LPBF Datasheet
Download the complete datasheet for Vishay IRFB16N60LPBF to view detailed technical specifications.
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