N-Channel Power MOSFET, 500V Vdss, 16A Continuous Drain Current. Features 0.32ohm Rds On, 220W Max Power Dissipation, and 30V Gate-to-Source Voltage. This silicon, metal-oxide semiconductor FET offers fast switching with 21ns turn-on delay and 28ns fall time. Encased in a TO-220-3 package for through-hole mounting, it operates from -55°C to 150°C.
PackageTO-220-3
Current Rating16A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFB17N50L technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 2.76nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 320mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 21ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFB17N50L Datasheet
Download the complete datasheet for Vishay IRFB17N50L to view detailed technical specifications.
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