N-Channel Power MOSFET, 500V Vdss, 20A Continuous Drain Current (ID). Features 250mR maximum drain-source on-resistance and 280W power dissipation. Operates with a 5V threshold voltage and 30V gate-source voltage. Packaged in a TO-220AB through-hole mount, this silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 22ns and fall time of 33ns. RoHS compliant and suitable for operation from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power280W
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Technical Specifications
Vishay IRFB20N50KPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 210mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 2.87nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 280W |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFB20N50KPBF Datasheet
Download the complete datasheet for Vishay IRFB20N50KPBF to view detailed technical specifications.
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