Vishay
IRFB9N30A
Power Field-Effect Transistor, 9.3A I(D), 300V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PackageTO-220AB
Current Rating9.3A
MountingThrough Hole
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Technical Specifications
Vishay IRFB9N30A technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
9.3A
Current Rating
9.3A
Drain to Source Voltage (Vdss)
300V
Input Capacitance
920pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
96W
Mount
Through Hole
Rds On Max
450mR
RoHS Compliant
No
DC Rated Voltage
300V
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFB9N30A Datasheet
Download the complete datasheet for Vishay IRFB9N30A to view detailed technical specifications.
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