N-channel power MOSFET featuring 600V drain-source breakdown voltage and 9.2A continuous drain current. Offers a low 0.75ohm drain-source on-resistance and 170W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 13ns turn-on delay and 30ns turn-off delay.
PackageTO-220AB
Current Rating9.2A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFB9N60APBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9.2A |
| Current Rating | 9.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 750mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 170W |
| Rds On Max | 750mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 600V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFB9N60APBF Datasheet
Download the complete datasheet for Vishay IRFB9N60APBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
