N-Channel Power MOSFET featuring 650V drain-source voltage and 8.5A continuous drain current. Offers a low 0.93 ohm drain-source on-resistance and 167W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this silicon metal-oxide semiconductor FET boasts fast switching times with a 14ns turn-on delay and 18ns fall time. Operating temperature range spans from -55°C to 150°C, with a 30V maximum gate-source voltage.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power167W
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Technical Specifications
Vishay IRFB9N65APBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Resistance | 930mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 930mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 1.417nF |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 167W |
| Radiation Hardening | No |
| Rds On Max | 930mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFB9N65APBF Datasheet
Download the complete datasheet for Vishay IRFB9N65APBF to view detailed technical specifications.
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