N-channel power MOSFET featuring 600V drain-source voltage and 2.2A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low 4.4 ohm drain-to-source resistance. Designed for through-hole mounting in a TO-262-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 50W. Key switching characteristics include a 10ns turn-on delay and 25ns fall time.
PackageTO-262-3
Current Rating2.2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC20L technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
2.2A
Current Rating
2.2A
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
600V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
350pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
4.4R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
600V
Weight
0.084199oz
Width
4.83mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFBC20L Datasheet
Download the complete datasheet for Vishay IRFBC20L to view detailed technical specifications.
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