N-Channel Power MOSFET, 600V Vdss, 2.2A Continuous Drain Current (ID), and 4.4Ω Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-262-3 package for through-hole mounting. Key specifications include a maximum power dissipation of 50W, input capacitance of 350pF, and fast switching times with turn-on delay of 10ns and fall time of 25ns. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC20LPBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 4.4R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 4.4R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.4R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.084199oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBC20LPBF Datasheet
Download the complete datasheet for Vishay IRFBC20LPBF to view detailed technical specifications.
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