N-Channel Power MOSFET, 600V Vds, 2.2A Continuous Drain Current, 4.4 Ohm Rds On. This silicon Metal-oxide Semiconductor FET features a D2PAK surface-mount package with a maximum power dissipation of 50W and an operating temperature range of -55°C to 150°C. Key switching characteristics include a 10ns turn-on delay, 30ns turn-off delay, and 25ns fall time, with an input capacitance of 350pF.
PackageD2PAK
Current Rating2.2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC20S technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
2.2A
Current Rating
2.2A
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
600V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
350pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
4.4R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
600V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFBC20S Datasheet
Download the complete datasheet for Vishay IRFBC20S to view detailed technical specifications.
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