N-Channel Power MOSFET, 600V Vdss, 3.6A continuous drain current, and 2.2 Ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-220AB package with through-hole mounting. Key electrical characteristics include a 14ns fall time, 35ns turn-off delay, and 11ns turn-on delay. Maximum power dissipation is 74W, with an operating temperature range from -55°C to 150°C.
PackageTO-220-3
Current Rating3.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC30 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
3.6A
Current Rating
3.6A
Drain to Source Resistance
2.2R
Drain to Source Voltage (Vdss)
600V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
660pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
2.2R
RoHS Compliant
No
Turn-Off Delay Time
35ns
Turn-On Delay Time
11ns
DC Rated Voltage
600V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFBC30 Datasheet
Download the complete datasheet for Vishay IRFBC30 to view detailed technical specifications.
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