N-Channel Power MOSFET featuring 600V drain-source voltage and 3.6A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low 2.2-ohm drain-source on-resistance. Designed for through-hole mounting in a TO-262-3 package, it operates from -55°C to 150°C with a maximum power dissipation of 74W. Key switching characteristics include a 9.8ns turn-on delay and a 12ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC30ALPBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.65mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.084199oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBC30ALPBF Datasheet
Download the complete datasheet for Vishay IRFBC30ALPBF to view detailed technical specifications.
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