N-channel power MOSFET featuring 600V drain-source voltage and 3.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2.2-ohm drain-source on-resistance and 74W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 9.8ns turn-on delay and 19ns turn-off delay.
PackageTO-220AB
Voltage600V
Current44A
MountingThrough Hole
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Technical Specifications
Vishay IRFBC30APBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.6A |
| Current | 44A |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2.2R |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 9.8ns |
| Voltage | 600V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBC30APBF Datasheet
Download the complete datasheet for Vishay IRFBC30APBF to view detailed technical specifications.
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