N-Channel Power MOSFET, D2PAK package, featuring 600V drain-source voltage and 3.6A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 2.2 Ohms and a maximum power dissipation of 74W. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C, with fast switching characteristics including a 9.8ns turn-on delay and 12ns fall time.
PackageD2PAK
Current Rating3.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC30AS technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
3.6A
Current Rating
3.6A
Drain to Source Resistance
2.2R
Drain to Source Voltage (Vdss)
600V
Fall Time
12ns
Gate to Source Voltage (Vgs)
30V
Height
4.83mm
Input Capacitance
510pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
2.2R
RoHS Compliant
No
Turn-Off Delay Time
19ns
Turn-On Delay Time
9.8ns
DC Rated Voltage
600V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFBC30AS Datasheet
Download the complete datasheet for Vishay IRFBC30AS to view detailed technical specifications.
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