N-Channel Power MOSFET, 600V Vdss, 3.6A continuous drain current, and 2.2Ω Rds On. This silicon Metal-oxide Semiconductor FET features a D2PAK surface mount package, 74W max power dissipation, and 510pF input capacitance. Operating temperature range is -55°C to 150°C, with turn-on delay of 9.8ns and fall time of 12ns. ROHS compliant and supplied on tape and reel.
PackageD2PAK
Current Rating3.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC30ASTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 3.6A |
| Current Rating | 3.6A |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 510pF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBC30ASTRRPBF Datasheet
Download the complete datasheet for Vishay IRFBC30ASTRRPBF to view detailed technical specifications.
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