N-Channel Power MOSFET, 600V Drain-Source Voltage, 3.6A Continuous Drain Current, and 2.2Ω Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB through-hole package, 74W maximum power dissipation, and operates from -55°C to 150°C. Key switching characteristics include an 11ns turn-on delay and 35ns turn-off delay.
PackageTO-220AB
Voltage600V
Current44A
MountingThrough Hole
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Technical Specifications
Vishay IRFBC30PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.6A |
| Current | 44A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2.2R |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 660pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 11ns |
| Voltage | 600V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBC30PBF Datasheet
Download the complete datasheet for Vishay IRFBC30PBF to view detailed technical specifications.
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