N-Channel Power MOSFET, 600V Vdss, 3.6A continuous drain current, and 2.2 ohm Rds On. This silicon Metal-oxide Semiconductor FET features a D2PAK-3 package for surface mounting, with a maximum power dissipation of 3.1W and operating temperatures from -55°C to 150°C. Key switching characteristics include a 11ns turn-on delay, 35ns turn-off delay, and a 14ns fall time, with an input capacitance of 660pF. This RoHS compliant component is supplied on tape and reel.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC30STRLPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 660pF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBC30STRLPBF Datasheet
Download the complete datasheet for Vishay IRFBC30STRLPBF to view detailed technical specifications.
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