N-Channel Power MOSFET, 600V Drain-Source Voltage (Vdss) and 6.2A Continuous Drain Current (ID). Features 1.2 Ohm Drain-Source On-Resistance (Rds On Max) and 125W Max Power Dissipation. Operates with a 20V Gate-Source Voltage (Vgs) and offers fast switching speeds with a 13ns Turn-On Delay Time and 20ns Fall Time. Packaged in a TO-220AB through-hole mount, this silicon Metal-oxide Semiconductor FET is suitable for demanding applications.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power125W
Quick Jump:
Technical Specifications
Vishay IRFBC40 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.3nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFBC40 Datasheet
Download the complete datasheet for Vishay IRFBC40 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
