N-Channel Power MOSFET, 600V Drain-Source Voltage (Vdss) and 6.2A Continuous Drain Current (ID). Features 1.2 Ohm Drain-Source On-Resistance (Rds On Max) and 125W Max Power Dissipation. Operates with a 20V Gate-Source Voltage (Vgs) and offers fast switching speeds with a 13ns Turn-On Delay Time and 20ns Fall Time. Packaged in a TO-220AB through-hole mount, this silicon Metal-oxide Semiconductor FET is suitable for demanding applications.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Vishay IRFBC40 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
6.2A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
600V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.3nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
1.2R
RoHS Compliant
No
Turn-Off Delay Time
55ns
Turn-On Delay Time
13ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFBC40 Datasheet
Download the complete datasheet for Vishay IRFBC40 to view detailed technical specifications.
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