N-Channel Power MOSFET, TO-220AB package, featuring 600V drain-source breakdown voltage and 1.2 Ohm maximum drain-source on-resistance. This silicon metal-oxide semiconductor FET offers a continuous drain current of 6.2A and a maximum power dissipation of 125W. It operates within a temperature range of -55°C to 150°C and includes lead-free and RoHS compliant construction. Key switching parameters include a 13ns turn-on delay and 18ns fall time.
PackageTO-220AB
Voltage600V
Current62A
Current Rating6.2A
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Technical Specifications
Vishay IRFBC40APBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
6.2A
Current
62A
Current Rating
6.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
1.2R
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
1.036nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
31ns
Turn-On Delay Time
13ns
Voltage
600V
DC Rated Voltage
600V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFBC40APBF Datasheet
Download the complete datasheet for Vishay IRFBC40APBF to view detailed technical specifications.
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