N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 6.2A Continuous Drain Current, and 1.2Ω Drain-Source Resistance. This silicon Metal-Oxide-Semiconductor FET features a D2PAK surface-mount package, 125W maximum power dissipation, and operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 13ns turn-on delay and 18ns fall time.
PackageD2PAK
Current Rating6.2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC40AS technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
6.2A
Current Rating
6.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
600V
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Height
4.83mm
Input Capacitance
1.036nF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Rds On Max
1.2R
RoHS Compliant
No
Turn-Off Delay Time
31ns
Turn-On Delay Time
13ns
DC Rated Voltage
600V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFBC40AS Datasheet
Download the complete datasheet for Vishay IRFBC40AS to view detailed technical specifications.
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