N-Channel Power MOSFET, D2PAK package, featuring 600V drain-to-source breakdown voltage and 6.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.2Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 125W. Ideal for surface mount applications, it operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including a 13ns turn-on delay and 18ns fall time.
PackageD2PAK
Current Rating6.2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC40ASTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 6.2A |
| Current Rating | 6.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.036nF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBC40ASTRRPBF Datasheet
Download the complete datasheet for Vishay IRFBC40ASTRRPBF to view detailed technical specifications.
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