N-Channel Power MOSFET with 600V Drain-Source Voltage (Vdss) and 6.2A Continuous Drain Current (ID). Features 1.2 Ohm Drain-Source On-Resistance (Rds On Max) and 125W Max Power Dissipation. Operates with a nominal Gate-Source Voltage (Vgs) of 4V, up to 30V. Includes 12ns Turn-On Delay Time and 27ns Turn-Off Delay Time. Packaged in TO-220AB for through-hole mounting.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBC40LC technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6.2A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
600V
Fall Time
17ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
1.1nF
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
27ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFBC40LC Datasheet
Download the complete datasheet for Vishay IRFBC40LC to view detailed technical specifications.
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