N-Channel Power MOSFET, 800V Vdss, 1.8A continuous drain current, and 6.5 Ohm Rds On. Features include 530pF input capacitance, 27ns fall time, 58ns turn-off delay, and 8.2ns turn-on delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package with through-hole mounting. Maximum power dissipation is 54W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-220-3
Current Rating1.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBE20 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.8A
Current Rating
1.8A
Drain to Source Resistance
6.5R
Drain to Source Voltage (Vdss)
800V
Fall Time
27ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
530pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
54W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
6.5R
RoHS Compliant
No
Turn-Off Delay Time
58ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
800V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFBE20 Datasheet
Download the complete datasheet for Vishay IRFBE20 to view detailed technical specifications.
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