N-Channel Power MOSFET, 800V Vdss, 1.8A continuous drain current, and 6.5 Ohm drain-source on-resistance. Features a TO-220AB through-hole package, 54W power dissipation, and operates from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 8.2ns and fall time of 27ns. This silicon Metal-oxide Semiconductor FET is RoHS compliant.
PackageTO-220AB
Current Rating1.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBE20PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 1.8A |
| Current Rating | 1.8A |
| Drain to Source Resistance | 6.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 6.5R |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 530pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 54W |
| Radiation Hardening | No |
| Rds On Max | 6.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 8.2ns |
| DC Rated Voltage | 800V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBE20PBF Datasheet
Download the complete datasheet for Vishay IRFBE20PBF to view detailed technical specifications.
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