N-Channel Power MOSFET, 800V Drain-Source Voltage, 4.1A Continuous Drain Current, and 3 Ohm Drain-Source On-Resistance. This silicon metal-oxide semiconductor field-effect transistor features a TO-220AB through-hole package, 125W maximum power dissipation, and a nominal gate-source threshold voltage of 4V. It offers fast switching characteristics with a 12ns turn-on delay and 30ns fall time, operating within a temperature range of -55°C to 150°C. The component is RoHS compliant and lead-free.
PackageTO-220AB
Voltage800V
Current48A
Current Rating4.1A
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Technical Specifications
Vishay IRFBE30PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 4.1A |
| Current | 48A |
| Current Rating | 4.1A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 12ns |
| Voltage | 800V |
| DC Rated Voltage | 800V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBE30PBF Datasheet
Download the complete datasheet for Vishay IRFBE30PBF to view detailed technical specifications.
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