N-Channel Power MOSFET, 800V Vdss, 4.1A continuous drain current, and 3 Ohm drain-source on-resistance. Features 125W power dissipation, 1.3nF input capacitance, and 30ns fall time. Packaged in a lead-free D2PAK surface-mount plastic case. Operates from -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Vishay IRFBE30SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBE30SPBF Datasheet
Download the complete datasheet for Vishay IRFBE30SPBF to view detailed technical specifications.
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