N-channel enhancement mode power MOSFET featuring 800V drain-source voltage and 4.1A continuous drain current. This surface-mount device utilizes a D2PAK (TO-263AB) package with gull-wing leads for SMT assembly. Key specifications include a maximum gate-source voltage of ±20V, a typical gate charge of 78nC at 10V, and a maximum power dissipation of 125W. The single-element transistor operates within a temperature range of -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Vishay IRFBE30STRLPbF technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.41(Max)
Package Width (mm)
9.65(Max)
Package Height (mm)
4.83(Max)
Seated Plane Height (mm)
4.83(Max) + 0.25
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-263AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
800V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
4.1A
Maximum Drain Source Resistance
3000@10VmOhm
Typical Gate Charge @ Vgs
78(Max)@10VnC
Typical Gate Charge @ 10V
78(Max)nC
Typical Input Capacitance @ Vds
1300@25VpF
Maximum Power Dissipation
125000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay IRFBE30STRLPbF Datasheet
Download the complete datasheet for Vishay IRFBE30STRLPbF to view detailed technical specifications.
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