N-Channel Power MOSFET, 900V Drain-Source Voltage (Vdss), 1.7A Continuous Drain Current (ID), and 8 Ohm Drain-Source Resistance (Rds On Max). Features include 8ns turn-on delay, 56ns turn-off delay, and 32ns fall time. This silicon, metal-oxide semiconductor FET is housed in a TO-220AB package with through-hole mounting. Maximum power dissipation is 54W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFBF20 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.7A
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
900V
Fall Time
32ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
490pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
54W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
8R
RoHS Compliant
No
Turn-Off Delay Time
56ns
Turn-On Delay Time
8ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFBF20 Datasheet
Download the complete datasheet for Vishay IRFBF20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
