N-Channel Power MOSFET, 900V Drain-Source Voltage (Vdss) and 1.7A Continuous Drain Current (ID). Features 8 Ohm Drain-Source On-Resistance (Rds On Max) and 3.1W Max Power Dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-262-3 package with through-hole mounting. Includes 8ns turn-on delay and 32ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBF20LPBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 8R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.084199oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBF20LPBF Datasheet
Download the complete datasheet for Vishay IRFBF20LPBF to view detailed technical specifications.
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