
N-Channel Power MOSFET, D2PAK package, featuring 900V drain-source voltage and 1.7A continuous drain current. Offers 8 Ohm drain-source resistance (Rds On Max) and 54W maximum power dissipation. Operates across a temperature range of -55°C to 150°C with fast switching characteristics including 8ns turn-on delay and 32ns fall time. Surface mountable with a 20V gate-source voltage rating.
Vishay IRFBF20S technical specifications.
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