N-Channel Power MOSFET, D2PAK package, featuring 900V drain-source voltage and 1.7A continuous drain current. Offers 8 Ohm drain-source on-resistance and 3.1W power dissipation. Designed for surface mounting with a 4V nominal gate-source voltage and 490pF input capacitance. Includes fast switching characteristics with 8ns turn-on delay and 32ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Vishay IRFBF20SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 8R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 490pF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 8R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBF20SPBF Datasheet
Download the complete datasheet for Vishay IRFBF20SPBF to view detailed technical specifications.
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