N-Channel Power MOSFET, designed for high voltage applications with a 900V drain-source voltage (Vdss). Features a continuous drain current (ID) of 1.7A and a low 8-ohm drain-source on-resistance (Rds On Max). This silicon, metal-oxide semiconductor FET is housed in a surface-mount D2PAK package, offering a maximum power dissipation of 54W. Key switching characteristics include a 8ns turn-on delay and a 32ns fall time, with a gate-source voltage (Vgs) rating of 20V. Operating temperature range spans from -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBF20STRL technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 490pF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 8R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFBF20STRL Datasheet
Download the complete datasheet for Vishay IRFBF20STRL to view detailed technical specifications.
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