N-channel power MOSFET featuring 900V drain-source voltage and 1.7A continuous drain current. This single-element silicon metal-oxide semiconductor FET offers an 8-ohm drain-source on-resistance and 54W maximum power dissipation. Designed for surface mounting in a D2PAK package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns turn-on delay and a 32ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Vishay IRFBF20STRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 8R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 8R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBF20STRLPBF Datasheet
Download the complete datasheet for Vishay IRFBF20STRLPBF to view detailed technical specifications.
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